17Gbit/s pin-PD/decision circuit using InP/InGaAs double-heterojunction bipolar transistors

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 393-394

  Yoneyama, M ^a   Sano, E ^a   Yamahata, S ^a   Matsuoka, Y ^a   Yaita, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Heterojunction bipolar transistors; OEIC; Optical receivers

Indexed keywords

BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; FOURIER TRANSFORMS; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED OPTOELECTRONICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SUBSTRATES;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR; ELECTRO OPTIC SAMPLING; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL INTERCONNECTION SYSTEMS; OPTICAL RECEIVER; PULSE PATTERN GENERATOR; TRANSIMPEDANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030081479     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960253     Document Type: Article

References (7)

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