Electron transport properties of quantized silicon carbide inversion layers

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 203-207

  Roldan J B ^a   Gamiz F ^a   Lopez Villanueva J A ^a   Cartujo, P ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

Electron mobility; High field transport properties; Polar optical phonon scattering; Silicon carbide inversion layer

Indexed keywords

EID: 3743072636     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0151-3     Document Type: Article

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