High quality GaN nanowires synthesized from Ga2O3 with graphite powder using VPE method

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Volumn 313-314, Issue , 2008, Pages 52-55

  Shin, T I ^a   Lee, H J ^a   Song, W Y ^d   Kim, H ^a   Kim, S W ^c   Yoon, D H ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Suwon University   (South Korea)

^c Kumoh National Institute of Technology   (South Korea)

^d NONE

Author keywords

Ga2O3 powder; GaN; Nanowires synthesis; VPE method

Indexed keywords

GALLIUM NITRIDE; GRAPHITE; SINGLE CRYSTALS; SUBSTRATES; SYNTHESIS (CHEMICAL); VAPOR PHASE EPITAXY; X RAY SCATTERING;

GA2O3 POWDER; HEXAGONAL STRUCTURE; NANOISLANDS;

NANOWIRES;

GALLIUM; GALLIUM NITRIDE; GRAPHITE; NANOWIRE; NITROGEN DERIVATIVE; OXIDE; UNCLASSIFIED DRUG;

ARTICLE; ATMOSPHERIC PRESSURE; MATERIALS TESTING; NANOCHEMISTRY; PRIORITY JOURNAL; RADIATION SCATTERING; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR;

EID: 37349129623     PISSN: 09277757     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.colsurfa.2007.04.072     Document Type: Article

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