Effect of 900°C air annealing on luminescence properties of ZnO thin film by L-MBE

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 28, Issue SUPPL., 2007, Pages 293-295

  Wang, Dong ^a   Zhang, Jingwen ^a   Han, Feng ^a   Zhang, Xin'an ^a,b   Bi, Zhen ^a   Bian, Xuming ^a   Hou, Xun ^a,b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b HENAN UNIVERSITY   (China)

Author keywords

Annealing; Excitonic; L MEB; Photoluminescence; ZnO

Indexed keywords

ANNEALING; FULL WIDTH AT HALF MAXIMUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DEEP LEVEL EMITTING (DLE); EXCITONICS EMITTING; LASER MOLECULAR BEAM EPITAXY (L-MEB); LUMINESCENCE PROPERTIES; NEAR BAND EMITTING (NBE);

ZINC OXIDE;

EID: 37349107123     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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