Trap state spectroscopy in CMR manganites and spinel manganates using opto-impedance

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 1, 2008, Pages 182-186

  Ragavendran, K ^a   Morchshakov, V ^b   Veluchamy, A ^a   Bärner, Klaus ^b  

^a CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

A. Semiconductors; D. Transport properties

Indexed keywords

DEFECT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRON TRAPS; RELAXATION TIME; SEMICONDUCTOR MATERIALS; TRANSPORT PROPERTIES;

CRYSTAL QUALITY; MANGANATES; OPTO-IMPEDANCE; PHOTORESISTIVITY; TRAP STATE SPECTROSCOPY;

MANGANITES;

EID: 37249014609     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.08.013     Document Type: Article

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