Transient ambipolar charge distributions in amorphous and crystalline semiconductors

Materials Science and Engineering B

Volumn 47, Issue 3, 1997, Pages 244-251

  Liebe, J ^a   Heinmann, K ^a   Barner K ^a   Medvedeva, I V ^b   Tang, Yi ^c   Dong, S ^c,d   Braunstein, R ^c  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b INSTITUTE OF METAL PHYSICS   (Russian Federation)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d JIANGSU UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Ambipolar charge; Heat diffusivity; Semiconductors

Indexed keywords

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; THERMAL DIFFUSION IN SOLIDS; THERMOELECTRICITY;

AMBIPOLAR CHARGE;

SEMICONDUCTOR MATERIALS;

EID: 0002640485     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00028-7     Document Type: Article

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