Active thermal interaction of source and crystal surfaces in PVT SiC crystal growth

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 87-90

  Grasza, K ^a,b   Tymicki, E ^a   Kisielewski, J ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b POLISH ACADEMY OF SCIENCES   (Poland)

Author keywords

Basal plane dislocations; Crystallization front shape and morphology; Growth from the vapor; Micropipes reduction

Indexed keywords

COMPUTATIONAL GEOMETRY; CRYSTALLIZATION; MORPHOLOGY; OPTIMIZATION; SILICON CARBIDE;

BASAL PLANE DISLOCATIONS; CRYSTALLIZATION FRONT SHAPE AND MORPHOLOGY; GROWTH FROM THE VAPOR; MICROPIPES REDUCTION;

CRYSTAL GROWTH;

EID: 37149054862     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.87     Document Type: Conference Paper

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