Creation of sub-20-nm contact using diblock copolymer on a 300 mm wafer for complementary metal oxide semiconductor applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 1982-1984

  Li, Wai Kin ^a   Yang, Sam ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DAMASCENE PROCESSES; TOPOGRAPHICAL PLACERS;

BLOCK COPOLYMERS; MOLECULAR WEIGHT; MOS DEVICES; PHOTOLITHOGRAPHY; SELF ASSEMBLY;

ELECTRIC CONTACTS;

EID: 37149046217     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2787732     Document Type: Article

References (5)

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4. C. T. Black, Proceedings of IEEE Custom Integrated Circuit Conference, 2005 (unpublished), p. 86.
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