A temperature-dependent current model for pHEMT on GaAs

Journal of Electromagnetic Waves and Applications

Volumn 22, Issue 1, 2008, Pages 39-46

  Wang, L ^a   Xu, R M ^a   Guo, Y C ^a   Yan, B ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; POLYNOMIALS; SEMICONDUCTING GALLIUM ARSENIDE;

POLYNOMIAL EXPRESSION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 36949037308     PISSN: 09205071     EISSN: 15693937     Source Type: Journal    
DOI: 10.1163/156939308783122779     Document Type: Article

References (9)

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