A high performance and reliable low-k inter-metal dielectric using hydrogen silsesquioxane (HSQ)

Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Volumn , Issue , 1999, Pages 193-195

  Cheng, Y Y ^a   Jang, S M ^a   Yu, C H ^a   Sun, S C ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON BEAM LITHOGRAPHY; METALS; THERMODYNAMIC STABILITY;

ADHESION TEST; CAPACITANCE REDUCTION; HIGH-PERFORMANCE INTERCONNECT; HOT CARRIER RELIABILITY; HYDROGEN SILSESQUIOXANE; INTER-METAL DIELECTRICS; OPTIMIZED PROCESS; PRODUCT RELIABILITY;

LOW-K DIELECTRIC;

EID: 36849086765     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1999.787119     Document Type: Conference Paper

References (3)

1. rd Int. DUMIC 1997, p. 13.
2. W. W. Lee et al. MRS Bulletin theme issue Vol. 22, No. 10, 1997, p. 19.
3. T. Gao et al., IITC 1998, p. 45.