-
1
-
-
36749046028
-
-
Semiconductors and Semimetals Vols. 69-71, edited by T. M.Tritt (Academic, San Diego, CA
-
R. Trends, in Thermoelectric Materials Research I-III, Semiconductors and Semimetals Vols. 69-71, edited by, T. M. Tritt, (Academic, San Diego, CA, 2001).
-
(2001)
Thermoelectric Materials Research I-III
-
-
Trends, R.1
-
2
-
-
77956665553
-
-
edited by T. M.Tritt (Academic, San Diego, CA
-
C. Uher, in Semiconductors and Semimetals, edited by, T. M. Tritt, (Academic, San Diego, CA, 2001), Vol. 69, pp. 139-253.
-
(2001)
Semiconductors and Semimetals
, vol.69
, pp. 139-253
-
-
Uher, C.1
-
3
-
-
0037289374
-
-
0950-6608 10.1179/095066003225010182
-
G. Chen, M. S. Dresselhaus, G. Dresselhaus, J. -P. Fleurial, and T. Caillat, Int. Mater. Rev. 0950-6608 10.1179/095066003225010182 48, 1 (2003), and references therein.
-
(2003)
Int. Mater. Rev.
, vol.48
, pp. 1
-
-
Chen, G.1
Dresselhaus, M.S.2
Dresselhaus, G.3
Fleurial, J.P.4
Caillat, T.5
-
4
-
-
0000330499
-
-
0163-1829 10.1103/PhysRevB.56.7376
-
D. T. Morelli, G. P. Meisner, B. X. Chen, S. Q. Hu, and C. Uher, Phys. Rev. B 0163-1829 10.1103/PhysRevB.56.7376 56, 7376 (1997).
-
(1997)
Phys. Rev. B
, vol.56
, pp. 7376
-
-
Morelli, D.T.1
Meisner, G.P.2
Chen, B.X.3
Hu, S.Q.4
Uher, C.5
-
7
-
-
79958199940
-
-
0003-6951 10.1063/1.1433911
-
G. A. Lamberton, Jr., S. Bhattacharya, R. T. Littleton IV, M. A. Kaeser, R. H. Tedstrom, T. M. Tritt, J. Yang, and G. S. Nolas, Appl. Phys. Lett. 0003-6951 10.1063/1.1433911 80, 598 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 598
-
-
Lamberton Jr. G., A.1
Bhattacharya, S.2
Littleton, I.V.R.T.3
Kaeser, M.A.4
Tedstrom, R.H.5
Tritt, T.M.6
Yang, J.7
Nolas, G.S.8
-
8
-
-
0000264103
-
-
0003-6951 10.1063/1.1311597
-
G. S. Nolas, M. Kaeser, R. T. Littleton IV, and T. M. Tritt, Appl. Phys. Lett. 0003-6951 10.1063/1.1311597 77, 1855 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 1855
-
-
Nolas, G.S.1
Kaeser, M.2
Littleton, I.V.R.T.3
Tritt, T.M.4
-
10
-
-
0001917088
-
-
0003-6951 10.1063/1.126874
-
G. S. Nolas, H. Takizawa, T. Endo, H. Sellinschegg, and D. C. Johnson, Appl. Phys. Lett. 0003-6951 10.1063/1.126874 77, 52 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 52
-
-
Nolas, G.S.1
Takizawa, H.2
Endo, T.3
Sellinschegg, H.4
Johnson, D.C.5
-
12
-
-
2442617170
-
-
0021-8979 10.1063/1.1688463
-
M. Puyet, B. Lenoir, A. Dauscher, M. Dehmas, C. Stiewe, and E. Müller, J. Appl. Phys. 0021-8979 10.1063/1.1688463 95, 4852 (2004).
-
(2004)
J. Appl. Phys.
, vol.95
, pp. 4852
-
-
Puyet, M.1
Lenoir, B.2
Dauscher, A.3
Dehmas, M.4
Stiewe, C.5
Müller, E.6
-
13
-
-
0035881395
-
-
0021-8979 10.1063/1.1388162
-
L. D. Chen, T. Kawahara, X. F. Tang, T. Goto, T. Hirai, J. S. Dyck, W. Chen, and C. Uher, J. Appl. Phys. 0021-8979 10.1063/1.1388162 90, 1864 (2001).
-
(2001)
J. Appl. Phys.
, vol.90
, pp. 1864
-
-
Chen, L.D.1
Kawahara, T.2
Tang, X.F.3
Goto, T.4
Hirai, T.5
Dyck, J.S.6
Chen, W.7
Uher, C.8
-
14
-
-
0001917088
-
-
0003-6951 10.1063/1.126874
-
G. S. Nolas, H. Takizawa, T. Endo, H. Sellinschegg, and D. C. Johnson, Appl. Phys. Lett. 0003-6951 10.1063/1.126874 77, 52 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 52
-
-
Nolas, G.S.1
Takizawa, H.2
Endo, T.3
Sellinschegg, H.4
Johnson, D.C.5
-
15
-
-
33645218759
-
-
0021-8979 10.1063/1.2172705
-
X. Y. Zhao, X. Shi, L. D. Chen, W. Q. Zhang, W. B. Zhang, and Y. Z. Pei, J. Appl. Phys. 0021-8979 10.1063/1.2172705 99, 053711 (2006).
-
(2006)
J. Appl. Phys.
, vol.99
, pp. 053711
-
-
Zhao, X.Y.1
Shi, X.2
Chen, L.D.3
Zhang, W.Q.4
Zhang, W.B.5
Pei, Y.Z.6
-
17
-
-
33751570620
-
-
0003-6951 10.1063/1.2397538
-
Y. Z. Pei, L. D. Chen, W. Zhang, X. Shi, S. Q. Bai, X. Y. Zhao, Z. G. Mei, and X. Y. Li, Appl. Phys. Lett. 0003-6951 10.1063/1.2397538 89, 221107 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 221107
-
-
Pei, Y.Z.1
Chen, L.D.2
Zhang, W.3
Shi, X.4
Bai, S.Q.5
Zhao, X.Y.6
Mei, Z.G.7
Li, X.Y.8
-
18
-
-
33846038199
-
-
0021-8979 10.1063/1.2375017
-
X. Tang, H. Li, Q. Zhang, M. Niino, and T. Goto, J. Appl. Phys. 0021-8979 10.1063/1.2375017 100, 123702 (2007).
-
(2007)
J. Appl. Phys.
, vol.100
, pp. 123702
-
-
Tang, X.1
Li, H.2
Zhang, Q.3
Niino, M.4
Goto, T.5
-
19
-
-
0242278064
-
-
0031-9007 10.1103/PhysRevLett.90.135505
-
R. P. Hermann, R. Jin, W. Schweika, F. Grandjean, D. Mandrus, B. C. Sales, and G. L. Long, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.90.135505 90, 135505 (2003).
-
(2003)
Phys. Rev. Lett.
, vol.90
, pp. 135505
-
-
Hermann, R.P.1
Jin, R.2
Schweika, W.3
Grandjean, F.4
Mandrus, D.5
Sales, B.C.6
Long, G.L.7
-
20
-
-
36449009417
-
-
0021-8979 10.1063/1.349830
-
D. J. Bergman and O. Levy, J. Appl. Phys. 0021-8979 10.1063/1.349830 70, 6821 (1991).
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 6821
-
-
Bergman, D.J.1
Levy, O.2
-
21
-
-
0000733183
-
-
0021-8979 10.1063/1.370660
-
D. J. Bergman and L. G. Fel, J. Appl. Phys. 0021-8979 10.1063/1.370660 85, 8205 (1999).
-
(1999)
J. Appl. Phys.
, vol.85
, pp. 8205
-
-
Bergman, D.J.1
Fel, L.G.2
-
22
-
-
0029252611
-
-
0965-9773 10.1016/0965-9773(95)00018-6
-
N. Scoville, C. Bajgar, J. Rolfe, J. -P. Fleurial, and J. Vandersande, Nanostruct. Mater. 0965-9773 10.1016/0965-9773(95)00018-6 5, 207 (1995).
-
(1995)
Nanostruct. Mater.
, vol.5
, pp. 207
-
-
Scoville, N.1
Bajgar, C.2
Rolfe, J.3
Fleurial, J.P.4
Vandersande, J.5
-
23
-
-
0041901004
-
-
0021-8979 10.1063/1.359663
-
B. A. Cook, J. L. Harringa, S. H. Han, and C. B. Vining, J. Appl. Phys. 0021-8979 10.1063/1.359663 78, 5474 (1995).
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 5474
-
-
Cook, B.A.1
Harringa, J.L.2
Han, S.H.3
Vining, C.B.4
-
24
-
-
0012671730
-
-
0021-8979 10.1063/1.1288015
-
S. Katsuyama, Y. Kanayama, M. Ito, K. Majima, and H. Nagai, J. Appl. Phys. 0021-8979 10.1063/1.1288015 88, 3484 (2000).
-
(2000)
J. Appl. Phys.
, vol.88
, pp. 3484
-
-
Katsuyama, S.1
Kanayama, Y.2
Ito, M.3
Majima, K.4
Nagai, H.5
-
25
-
-
0037349797
-
-
0021-8979 10.1063/1.1545158
-
S. Katsuyama, M. Watanabe, M. Kuroki, T. Maehata, and M. Ito, J. Appl. Phys. 0021-8979 10.1063/1.1545158 93, 2758 (2003).
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 2758
-
-
Katsuyama, S.1
Watanabe, M.2
Kuroki, M.3
Maehata, T.4
Ito, M.5
-
27
-
-
33645695078
-
-
0021-8979 10.1063/1.2180432
-
L. D. Chen, X. Y. Huang, M. Zhou, X. Shi, and W. B. Zhang, J. Appl. Phys. 0021-8979 10.1063/1.2180432 99, 064305 (2006).
-
(2006)
J. Appl. Phys.
, vol.99
, pp. 064305
-
-
Chen, L.D.1
Huang, X.Y.2
Zhou, M.3
Shi, X.4
Zhang, W.B.5
-
28
-
-
33748275276
-
-
0003-6951 10.1063/1.2345249
-
X. Y. Zhao, X. Shi, L. D. Chen, W. Q. Zhang, S. Q. Bai, Y. Z. Pei, X. Y. Li, and T. Goto, Appl. Phys. Lett. 0003-6951 10.1063/1.2345249 89, 092121 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 092121
-
-
Zhao, X.Y.1
Shi, X.2
Chen, L.D.3
Zhang, W.Q.4
Bai, S.Q.5
Pei, Y.Z.6
Li, X.Y.7
Goto, T.8
-
29
-
-
33847632045
-
-
0021-8979 10.1063/1.2561628
-
Z. He, C. Stiewe, D. Platzek, G. Karpinski, E. Müller, S. Li, M. Toprak, and M. Muhammed, J. Appl. Phys. 0021-8979 10.1063/1.2561628 101, 043707 (2007).
-
(2007)
J. Appl. Phys.
, vol.101
, pp. 043707
-
-
He, Z.1
Stiewe, C.2
Platzek, D.3
Karpinski, G.4
Müller, E.5
Li, S.6
Toprak, M.7
Muhammed, M.8
-
30
-
-
2142815839
-
-
0003-6951 10.1063/1.1687997
-
X. Shi, L. Chen, J. Yang, and G. P. Meisner, Appl. Phys. Lett. 0003-6951 10.1063/1.1687997 84, 2301 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 2301
-
-
Shi, X.1
Chen, L.2
Yang, J.3
Meisner, G.P.4
-
31
-
-
27744485491
-
-
0921-4526
-
X. Shi, L. D. Chen, S. Q. Bai, W. B. Zhang, and X. Y. Zhao, Physica B (Amsterdam) 369, 28 (2005). 0921-4526
-
(2005)
Physica B (Amsterdam)
, vol.369
, pp. 28
-
-
Shi, X.1
Chen, L.D.2
Bai, S.Q.3
Zhang, W.B.4
Zhao, X.Y.5
-
32
-
-
28844435865
-
-
0031-9007 10.1103/PhysRevLett.95.185503
-
X. Shi, W. Zhang, L. D. Chen, and J. Yang, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.95.185503 95, 185503 (2005).
-
(2005)
Phys. Rev. Lett.
, vol.95
, pp. 185503
-
-
Shi, X.1
Zhang, W.2
Chen, L.D.3
Yang, J.4
-
36
-
-
0001252305
-
-
0163-1829 10.1103/PhysRevB.51.9622
-
D. T. Morelli, T. Caillat, J. -P. Fleurial, A. Borshchevsky, J. Vandersande, B. Chen, and C. Uher, Phys. Rev. B 0163-1829 10.1103/PhysRevB.51. 9622 51, 9622 (1995).
-
(1995)
Phys. Rev. B
, vol.51
, pp. 9622
-
-
Morelli, D.T.1
Caillat, T.2
Fleurial, J.P.3
Borshchevsky, A.4
Vandersande, J.5
Chen, B.6
Uher, C.7
|