Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 583, Issue 1, 2007, Pages 181-184

  Gaubas, E ^a   Vaitkus, J ^a   Kazlauskas, K ^a   Zukauskas A ^a   Grant, J ^b   Bates, R ^b   O'shea, V ^b   Strittmatter, A ^c   Bimberg, D ^c   Gibart, P ^d  

^a VILNIUS UNIVERSITY   (Lithuania)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d LUMILOG   (France)

Author keywords

Carrier lifetime; Radiation defects; Recombination and trapping; Semi insulating GaN

Indexed keywords

CARRIER LIFETIME; DEFECT STRUCTURES; ELECTRON TRAPS; GALLIUM NITRIDE; NEUTRON IRRADIATION; PHOTOLUMINESCENCE SPECTROSCOPY;

PHOTOLUMINESCENCE SPECTRA; RADIATION DEFECTS; RECOMBINATION AND TRAPPING; SEMI-INSULATING GAN;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 36549011900     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.08.195     Document Type: Article

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