Effect of pulse parameters on the deposition rate of hydrogenated amorphous silicon in a modified pulsed plasma discharge

Applied Physics Letters

Volumn , Issue , 1995, Pages 85-

  Anandan, C ^a   Mukherjee, C ^a   Seth, Tanay ^a   Dixit, P N ^a   Bhattacharyya, R ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

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EID: 36449001431     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.114154     Document Type: Article

References (11)