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Volumn 1992-December, Issue , 1992, Pages 457-460

Kinetics of high concentration arsenic deactivation at moderate to low temperatures

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTRON DEVICES;

EID: 84951903321     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307400     Document Type: Conference Paper
Times cited : (20)

References (13)
  • 1
    • 0015563867 scopus 로고
    • Effect of complex formation on diffusion of arsenic in silicon
    • R. B. Fair and G. R. Weber, "Effect of complex formation on diffusion of arsenic in silicon, " J. Appl. Phys., 44(1), p. 273, (1973).
    • (1973) J. Appl. Phys. , vol.44 , Issue.1 , pp. 273
    • Fair, R.B.1    Weber, G.R.2
  • 2
    • 0019021929 scopus 로고
    • Shallow junctions by high-dose As implants in Si: Experiments and modeling
    • M. Y. Tsai, F. F. Morehead, J. E. E. Baglin and A. E. Michel, "Shallow junctions by high-dose As implants in Si: experiments and modeling, " J. Appl. Phys., 51(6), p. 3230, (1980).
    • (1980) J. Appl. Phys. , vol.51 , Issue.6 , pp. 3230
    • Tsai, M.Y.1    Morehead, F.F.2    Baglin, J.E.E.3    Michel, A.E.4
  • 4
    • 0020735677 scopus 로고
    • Precipitation as the phenomenon responsible for the electrically inactive arsenic in silicon
    • D. Nobill, A. Carabelas, G. Celotti and S. Solmi, "Precipitation as the phenomenon responsible for the electrically inactive arsenic in silicon, " J. Electrochem. Soc., 130(4), p. 922, (1983).
    • (1983) J. Electrochem. Soc. , vol.130 , Issue.4 , pp. 922
    • Nobill, D.1    Carabelas, A.2    Celotti, G.3    Solmi, S.4
  • 5
    • 0025576797 scopus 로고
    • Simulation and experimental study of the dynamics of arsenic clustering and precipitation including ramp-up and ramp-down conditions
    • R. Subrahmanyan, M. Orlowski and G. Huffman, "Simulation and experimental study of the dynamics of arsenic clustering and precipitation including ramp-up and ramp-down conditions, " International Electron Devices Meeting, p. 749 (1990).
    • (1990) International Electron Devices Meeting , pp. 749
    • Subrahmanyan, R.1    Orlowski, M.2    Huffman, G.3
  • 6
    • 0025578294 scopus 로고
    • Evidence and modeling of anomalous low concentration arseniC inactivation
    • L. J. Borucki, "Evidence and modeling of anomalous low concentration arseniC inactivation, " International Electron Devices Meeting, p. 753 (1990).
    • (1990) International Electron Devices Meeting , pp. 753
    • Borucki, L.J.1
  • 7
    • 21544458253 scopus 로고
    • The solid solubility and thermal behavior of metastable concentrations of As in Si
    • A. Leitoila, J. F. Gibbons and T. W. Sigmon, 'The solid solubility and thermal behavior of metastable concentrations of As in Si, " Appl. Phys. Lett., 36(9), p. 765, (1980).
    • (1980) Appl. Phys. Lett. , vol.36 , Issue.9 , pp. 765
    • Leitoila, A.1    Gibbons, J.F.2    Sigmon, T.W.3
  • 8
    • 0022221135 scopus 로고
    • Clustering kinetics of arsenic and phosphorus in laser annealed silicon
    • J. Goetzlich, "Clustering kinetics of arsenic and phosphorus in laser annealed silicon, " Mat. Res. Soc. Proc., 45, p. 349, (1985).
    • (1985) Mat. Res. Soc. Proc. , vol.45 , pp. 349
    • Goetzlich, J.1
  • 9
    • 0024088345 scopus 로고
    • A shallow junction PMOS process without high temperature anneals
    • P. G. Carey, K. H. Weiner and T. W. Sigmon, "A shallow junction PMOS process without high temperature anneals, " IEEE Electron Dev. Lett., EDL-9(10), p. 542, (1988).
    • (1988) IEEE Electron Dev. Lett. , vol.EDL-9 , Issue.10 , pp. 542
    • Carey, P.G.1    Weiner, K.H.2    Sigmon, T.W.3
  • 10
    • 0020783138 scopus 로고
    • Modeling of carrier mobility against carrier concentration in arsenic-, phosphorusand boron-doped silicon
    • G. Masetti, M. Severi and S. Solmi, "Modeling of carrier mobility against carrier concentration in arsenic-, phosphorusand boron-doped silicon, " IEEE Trans. Elect. Dev, 30, 764, (1983).
    • (1983) IEEE Trans. Elect. Dev , vol.30 , pp. 764
    • Masetti, G.1    Severi, M.2    Solmi, S.3
  • 13
    • 0000711874 scopus 로고
    • Annealing of heavily arsenic-doped silicon: Electrical deactivation and a new defect complex
    • K. C. Pandey, A. Erbil, G. S. Cargill, III, R. F. Boehme and D. Vanderbilt, "Annealing of heavily arsenic-doped silicon: electrical deactivation and a new defect complex, " Phys. Rev. Lett, 61, p. 1282, (1988).
    • (1988) Phys. Rev. Lett , vol.61 , pp. 1282
    • Pandey, K.C.1    Erbil, A.2    Cargill, G.S.3    Boehme, R.F.4    Vanderbilt, D.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.