Comparison of irradiated stFZ silicon sensors using LHC speed front-end electronics

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 583, Issue 1, 2007, Pages 14-17

  Eckert, S ^a   Ehrich, T ^a   Jakobs, K ^a   Kuhn S ^a   Parzefall, U ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

90 Sr set up; Charge collection efficiency; IR laser; Irradiation; Radiation damage; Silicon micro strip detectors

Indexed keywords

ANNEALING; INFRARED IMAGING; IRRADIATION; LEAKAGE CURRENTS; RADIATION DAMAGE; WAVELENGTH;

CCE MEASUREMENTS; CHARGE COLLECTION EFFICIENCY; DEPLETION VOLTAGE; IRRADIATED DETECTOR MODULES;

SILICON DETECTORS;

EID: 36448970919     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.08.192     Document Type: Article

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