Characterization of directly deposited silicon films using low-energy focused ion beam

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6584-6587

  Yanagisawa, Junichi ^a   Onishi, Noriyuki ^a   Nakayama, Hiromasa ^a   Gamo, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Auger electron spectroscopy (AES); Direct deposition; Focused ion beam (FIB); Silicon film; Silicon oxide film

Indexed keywords

EID: 3643098974     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6584     Document Type: Article

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