Laser manipulation of clusters, structural defects and nanoaggregates in barrier structures on silicon and binary semi-conductors

Applied Surface Science

Volumn 247, Issue 1-4, 2005, Pages 590-601

  Vorobets, G I ^a   Vorobets, O I ^a   Strebegev, V N ^a  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Laser; Schottky barrier; Semi conductors; Structural defects

Indexed keywords

AGGREGATES; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); EDGE DETECTION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; LASER BEAM EFFECTS; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE STRUCTURE; THYRISTORS;

LASER; SCHOTTKY BARRIER; SEMI-CONDUCTORS; STRUCTURAL DEFECTS;

SEMICONDUCTOR MATERIALS;

EID: 19744364819     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.01.081     Document Type: Article

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