Seed layer, solution concentration and thickness effects on CSD-derived La2Zr2O7 buffer layers for coated conductors

Physica C: Superconductivity and its Applications

Volumn 467, Issue 1-2, 2007, Pages 73-79

  Zhu, X B ^a,b   Lei, H C ^a   Shi, D Q ^b   Zhang, L ^c   Wang, L ^b   Sun, Y P ^a   Song, W H ^a   Yang, Z R ^a   Kim, J H ^b   Zeng, R ^b   Dou, S X ^b   Yang, J ^d   Gu, H W ^d  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b UNIVERSITY OF WOLLONGONG   (Australia)

^c ANHUI JIANZHU UNIVERSITY   (China)

^d GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

Buffer layers; Chemical solution deposition; Metalorganic deposition

Indexed keywords

BUFFER LAYERS; CONCENTRATION (PROCESS); CRYSTALLIZATION; LANTHANUM COMPOUNDS; MICROSTRUCTURE; PROPANOL;

CHEMICAL SOLUTION DEPOSITION; METALORGANIC DEPOSITION; SEED LAYERS; SOLUTION CONCENTRATION;

ELECTRIC CONDUCTORS;

EID: 36148993558     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physc.2007.08.008     Document Type: Article

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