A monolithic pixel sensor in 0.15 μ m fully depleted SOI technology

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 583, Issue 2-3, 2007, Pages 526-528

  Battaglia, Marco ^a,b   Bisello, Dario ^c   Contarato, Devis ^b   Denes, Peter ^b   Giubilato, Piero ^b,c   Glesener, Lindsay ^a   Vu, Chinh ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

CMOS technology; Monolithic pixel sensor; Particle detection; SOI

Indexed keywords

CHARGED PARTICLES; CMOS INTEGRATED CIRCUITS; PARTICLE DETECTORS; PIXELS; SILICON ON INSULATOR TECHNOLOGY;

MONOLITHIC PIXEL SENSORS; PARTICLE DETECTION;

IMAGE SENSORS;

EID: 36148953875     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.09.042     Document Type: Article

References (4)

1. Marczewski J., et al. Nucl. Instr. and Meth. A 549 (2005) 112
2. Niemiec H., et al. Nucl. Instr. and Meth. A 568 (2006) 153
3. T. Tsuboyama, et al., Nucl. Instr. and Meth. A (2007), doi:10.1016/j.nima.2007.07.130.
4. Gaede F. Nucl. Instr. and Meth. A 559 (2006) 177