Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman (VB) method

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 437-440

  Taishi, T ^a   Hayashi, T ^b   Bamba, N ^c   Ohno, Y ^a   Yonenaga, I ^a   Hoshikawa, K ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b Citizen Fine Tech Co Ltd   (Japan)

^c SHINSHU UNIVERSITY   (Japan)

Author keywords

Interstitial; Langasite single crystal; Oxygen defects; Resistivity

Indexed keywords

ANNEALING; ARGON; IMPURITIES; LIGHT TRANSMISSION; OXYGEN VACANCIES; SINGLE CRYSTALS;

LANGASITE SINGLE CRYSTALS; OXYGEN DEFECTS; PIEZOELECTRIC LANGASITE; VERTICAL BRIDGMAN METHOD;

CRYSTAL GROWTH;

EID: 36049028045     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.206     Document Type: Article

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