Fabrication of thermoelectric sensor using silicon-on-insulator structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 11, 2007, Pages 7232-7236

  Lee, Wang Hoon ^a   Lee, Young Tae ^c   Takao, Hidekuni ^a,b   Sawada, Kazuaki ^a,b   Ishida, Makoto ^a,b  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Andong National University   (South Korea)

Author keywords

EMF; SOI; Thermal conductivity; Thermoelectric; Thermopile

Indexed keywords

ELECTROMOTIVE FORCE; SEEBECK COEFFICIENT; SILICA; SILICON ON INSULATOR TECHNOLOGY; SINGLE CRYSTALS; THERMAL CONDUCTIVITY;

SELECTIVE ABSORPTION AREA (SAA); THERMOELECTRIC MATERIAL; THERMOELECTRIC SENSORS; THERMOPILE;

THERMOELECTRIC EQUIPMENT;

EID: 35948960761     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.7232     Document Type: Article

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