High temperature stability of optical properties of InAs quantum dots realized by controlling of quantum dots electronic spectrum

International Journal of Nanoscience

Volumn 6, Issue 3-4, 2007, Pages 283-286

  Kryzhanovskaya, N V ^a   Gladyshev, A G ^a   Blokhin, S A ^a   Vasil'ev, A P ^a   Semenova, E S ^a   Zhukov, A E ^a   Maximov, M V ^a   Ledentsov, N N ^a   Ustinov, V M ^a   Warming, T ^b   Wieczorek, W ^b   Bimberg, D ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Molecular beam epitaxy; Photoluminescence; Quantum dots; Resonant excitation

Indexed keywords

CHARGE CARRIERS; EXCITED STATES; INDIUM ARSENIDE; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

CARRIER DISTRIBUTION; CARRIER LOCALIZATION ENERGY; ELECTRONIC SPECTRUM; ENERGY SEPARATION; ROOM TEMPERATURE; THERMAL ESCAPING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 35948959732     PISSN: 0219581X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0219581x07004742     Document Type: Article

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