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Volumn 38, Issue 10-11, 2007, Pages 1064-1069

Staircase-down SET programming approach for phase-change memories

Author keywords

Non volatile memories; Phase change memories; Programming technique

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER PROGRAMMING;

EID: 35848958587     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.07.121     Document Type: Article
Times cited : (11)

References (11)
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    • S. Tyson, G. Wicker, T. Lowrey, S. Hudgens, K. Hunt, Nonvolatile, high density, high performance phase-change memory, in: Proceedings of 2000 IEEE Aerospace Conference, vol. 5, March 2000, pp. 385-390.
  • 2
    • 0034843454 scopus 로고    scopus 로고
    • J. Maimon, E. Spall, R. Quinn, S. Schnur, Chalcogenide-based non-volatile memory technology, in: Proceedings of 2001 IEEE Aerospace Conference, vol. 5, March 2001, pp. 2289-2294.
  • 3
    • 0035717521 scopus 로고    scopus 로고
    • S. Lai, T. Lowrey, OUM-a 180 nm nonvolatile memory cell element technology for stand-alone and embedded applications, Int. Electron Devices Meet. Tech. Dig. (2001), 803-806.
  • 4
    • 85013249171 scopus 로고    scopus 로고
    • M. Gill, T. Lowrey, J. Park, Ovonic unified memory-a high performance nonvolatile memory technology for stand-alone memory and embedded applications, in: 2002 IEEE Solid-State Circuits Conference Dig. Tech. Pap., vol. 1, February 2002, pp. 458-459.
  • 5
    • 4544229593 scopus 로고    scopus 로고
    • F. Pellizzer, A. Pirovano, F. Ottogalli, M. Mangistretti, M. Scaravaggi, P. Zuliani, M. Tosi, A. Benvenuti, P. Besana, S. Cadeo, T. Marangon, R. Morandi, R. Piva, A. Spandre, R. Zonca, A. Modelli, E. Varesi, T. Lowrey, A. Lacaita, G. Casagrande, P. Cappelletti, R. Bez, Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications, in: Proceedings of 2004 Symposium on VLSI Technology, June 2004, pp. 18-19.
  • 6
    • 0020844527 scopus 로고
    • An improved method for programming a word-erasable EEPROM
    • Torelli G., and Lupi P. An improved method for programming a word-erasable EEPROM. Alta Frequenza LII (1983) 487-494
    • (1983) Alta Frequenza , vol.LII , pp. 487-494
    • Torelli, G.1    Lupi, P.2
  • 8
    • 4544337857 scopus 로고    scopus 로고
    • F. Bedeschi, C. Resta, O. Khouri, E. Buda, L. Costa, M. Ferraro, F. Pellizzer, F. Ottogalli, A. Pirovano, M. Tosi, R. Bez, R. Gastaldi, G. Casagrande, An 8 Mb demonstrator for high-density 1.8 V phase-change memories, in: Proceedings of 2004 Symposium on VLSI Circuits, June 2004, pp. 442-445.
  • 9
    • 35848944165 scopus 로고    scopus 로고
    • T. Lowrey, A. Tyler, Programming a phase-change material memory, US Patent 6570784, May 2003.
  • 10
    • 28144433029 scopus 로고    scopus 로고
    • H.-R. On, B.-H. Cho, W.Y. Cho, S. Kang, B.-G. Choi, H.-J. Kim, K. Kim, D.-E. Kim, C.-K. Kwak, H.-G. Byun, G.-T. Jeong, H.-S. Jeong, K. Kim, Enhanced write performance of a 64 Mb phase-change random access memory, in: 2005 IEEE Solid-State Circuits Conference Dig. Tech. Pap., vol. 1, February 2005, pp. 48-49.
  • 11
    • 67649099945 scopus 로고    scopus 로고
    • F. Bedeschi, E. Bonizzoni, G. Casagrande, R. Gastaldi, C. Resta, G. Torelli, D. Zella, SET and RESET pulse characterization in BJT-selected phase-change memories, in: Proceedings of 2005 IEEE International Symposium on Circuits and Systems, May 2005, pp. 1270-1273.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.