Fluctuation model for a rough metal/semiconductor interface

Physica Status Solidi C: Conferences

Volumn , Issue 3, 2003, Pages 933-938

  Dmitruk, N L ^a   Borkovskaya, O Yu ^a   Horvath Zs J ^b   Mamontova, I B ^a   Mamykin, S V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

APPARENT TEMPERATURE; BARRIER STRUCTURES; DARK CURRENT-VOLTAGE; FLUCTUATION MODEL; PHOTOELECTRIC CHARACTERISTICS; RICHARDSON CONSTANT; SCHOTTKY BARRIERS; WET ANISOTROPIC ETCHING;

OPEN CIRCUIT VOLTAGE; SCHOTTKY BARRIER DIODES;

SEMICONDUCTOR MATERIALS;

EID: 35748974657     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306228     Document Type: Conference Paper

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