Texturized interface as a basis of surface-barrier heterostructure for solar cells application

Solar Energy Materials and Solar Cells

Volumn 60, Issue 4, 2000, Pages 379-390

  Dmitruk, N L ^a   Borkovskaya, O Yu ^a   Mamontova, I B ^a   Mamykin, S V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; ETCHING; GOLD; HETEROJUNCTIONS; INTERFACES (MATERIALS); PASSIVATION; PHOTOSENSITIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SULFUR; TEXTURES;

RECOMBINATION LOSSES; SURFACE-BARRIER STRUCTURES (SBS); WET ETCHING;

SOLAR CELLS;

EID: 0033909983     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(99)00090-2     Document Type: Article

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