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As reported in ref 6, interactions in MeSCSiSi moieties are governed by two geometrical parameters: the dihedral angle θ about the MeS-CSi bond and the dihedral angle φ about the SC-SiSi bond. The dihedral angles about the CTe-CSi bond (θ) and TeC-SiSi bond (φ) in 3c are 116 and 70, and 170°, respectively. These dihedral angles are comparable to those found for 1e.
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As reported in ref 6, interactions in MeSCSiSi moieties are governed by two geometrical parameters: the dihedral angle θ about the MeS-CSi bond and the dihedral angle φ about the SC-SiSi bond. The dihedral angles about the CTe-CSi bond (θ) and TeC-SiSi bond (φ) in 3c are 116 and 70, and 170°, respectively. These dihedral angles are comparable to those found for 1e.
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