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Volumn 76, Issue 4, 2007, Pages

Vertical asymmetry and the ripple-rotation transition in epitaxial growth and erosion on (110) crystal surfaces

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION EFFICIENCY; EPITAXIAL GROWTH; PHASE INTERFACES; STATISTICAL MECHANICS; SURFACE MORPHOLOGY;

EID: 35448956783     PISSN: 15393755     EISSN: 15502376     Source Type: Journal    
DOI: 10.1103/PhysRevE.76.041605     Document Type: Article
Times cited : (9)

References (20)
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    • For example, on (100) surfaces, positive VA values favor rounder tops of four-sided pyramids and sharper four-sided pyramidal pits (relative to zero VA morphologies with no difference between tops and pits widths). Experiments on (100) surfaces indeed reveal these features (i. e., a positive VA) to be typically realized. See the micrographs of the checkerboard structure of alternating four-sided pyramids and pyramidal pits on Cu(100) surface, in PRLTAO 0031-9007 10.1103/PhysRevLett.95.256101
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