60 GHz broadband 0/1-level RF-via interconnect for RF-MEMS packaging

Electronics Letters

Volumn 43, Issue 22, 2007, Pages 1203-1205

  Wu, W C ^a,b   Hsu, L H ^a   Chang, E Y ^a   Starski, J P ^b   Zirath, H ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POWER SYSTEM INTERCONNECTION; FABRICATION; MAGNETOELECTRIC EFFECTS; MEMS;

BROADBAND; ELECTROMAGNETIC SIMULATION TOOL; INSERTION LOSS; RF-MEMS DEVICES;

ELECTRONICS PACKAGING;

EID: 35448947792     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072083     Document Type: Article

References (4)

1. De Los Santos, H.J.: et al. ' RF MEMS for ubiquitous wireless connectivity. Part I. Fabrication ', IEEE Microw. Mag., 2004, 5, (4), p. 36-49 10.1109/MMW.2004.1380277 1527-3342
2. Margomenos, A.: et al. ' Silicon micromachined packages for RF MEMS switches ', Proc. Gallium Arsenide Applications Symp. (GAAS), London, UK, September, 2001, p. 24-28
3. Ponchak, G.E., Papapolymerous, J., and Tentzeris, M.M.: ' Excitation of coupled slotline mode in finite-ground CPW with unequal ground-plane widths ', IEEE Trans. Microw. Theory Tech., 2005, 53, (2), p. 713-717 0018-9480
4. 0.48As/InGaAs metamorphic HEMT device for millimeter wave application ', CS-MAX, Compound Semiconductor Manufacturing Expo, Palm Spring, FL, USA, October, 2005, p. 94-97