Characterizations of double-gate SBTT studying by a 2-D full-band Monte Carlo device simulator

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Volumn 4, Issue , 2004, Pages 325-327

  Du, Gang ^a   Liu, Xiaoyan ^a   Liu, Meng ^a   Sun, Lei ^a   Han, Ruqi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TUNNELING; MOSFET DEVICES; PHONONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; VELOCITY CONTROL;

CONTROLLABILITY ANALYSIS; DOUBLE GATE STRUCTURES; DRAIN CURRENT; SCHOTTKY BARRIER TUNNELING TRANSISTOR (SBTT);

GATES (TRANSISTOR);

EID: 3543115069     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Conference Paper

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