Two and three dimensional MOSFETs simulation with density gradient model

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Volumn 4, Issue , 2004, Pages 317-320

  Toyabe, Toru ^a  

^a TOYO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; EXTRAPOLATION; GATES (TRANSISTOR); HEAT CONDUCTION; IONIZATION; QUANTUM EFFICIENCY;

CARRIER ENERGY; DENSITY GRADIENT; DRAIN CURRENT; IONIZATION CONSTANTS;

MOSFET DEVICES;

EID: 3543106802     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Conference Paper

References (4)

1. X. Huang, et al., IEEE IEDM Tech. Dig., pp.67-70, 1999.
2. M. G. Ancona and H. F. Tiersten, Phys. Rev. B, vol.35, pp.7959-7965, 1987.
3. A. Wettstein, A. Schenk and W. Fichtner, IEEE Trans. Electron devices, vol. 48, pp.279-284, 2001.
4. J.R. Watling, A. R. Brown, A. Asenov, A. Svizhenko and M. P. Anantram, SISPAD 2002, pp. 267-270 2002.