Si-based rare earth doped light emitting devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5366, Issue , 2004, Pages 137-148

  Castagna, Maria Eloisa ^a,b   Coffa, Salvatore ^a   Monaco, Mariantonietta ^a  

^a STMICROELECTRONICS   (Italy)

^b NONE   (Italy)

Author keywords

MOS; Rare Earths; Schottky; SCLC; SRO

Indexed keywords

DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTROLUMINESCENCE; ENERGY TRANSFER; LIGHT SOURCES; MOS DEVICES; QUANTUM EFFICIENCY; RARE EARTH ELEMENTS; RELIABILITY; SILICON; STABILITY;

IMPACT EXCITATION; POWER COEFFICIENT; SPACE CHARGE LIMITED CONDUCTION (SCLC); WAVELENGTHS;

LIGHT EMITTING DIODES;

EID: 3543098558     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.528989     Document Type: Conference Paper

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