Electrical properties of a novel 1,3-bis-(p-imino-benzoic acid) indane Langmuir-Blodgett films containing ZnS Nanoparticles

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 8, 2007, Pages 2654-2658

  Sari, H ^a   Uzunoglu, T ^a   Capan, R ^b   Serin, N ^a   Serin, T ^a   Tarimci, C ^a   Hassan, A K ^c   Namli, H ^b   Turhan, O ^b  

^a ANKARA UNIVERSITY   (Turkey)

^b BALIKESIR UNIVERSITY   (Turkey)

^c SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

Author keywords

1,3 bis (p iminobenzoic acid) indane; Electrical properties; Langmuir Blodgett films; Nanoparticles; ZnS nanoparticles

Indexed keywords

BENZOIC ACID (BAC); ELECTRICAL (ELECTRONIC) PROPERTIES; LANGMUIR-BLODGETT (LB) FILMS; ZNS NANO-PARTICLES;

ELECTRIC PROPERTIES; NANOPARTICLES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; ZINC; ZINC SULFIDE;

LANGMUIR BLODGETT FILMS;

1,3 BIS(4 IMINOBENZOIC ACID)INDANE; 1,3-BIS(4-IMINOBENZOIC ACID)INDANE; 4 AMINOBENZOIC ACID; DRUG DERIVATIVE; HYDROGEN SULFIDE; INDAN DERIVATIVE; NANOPARTICLE; SULFIDE; UNCLASSIFIED DRUG; ZINC; ZINC DERIVATIVE; ZINC SULFIDE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; ELECTROCHEMISTRY; METHODOLOGY; NANOTECHNOLOGY; ORGANIC CHEMISTRY; SEMICONDUCTOR; SPECTROPHOTOMETRY; SURFACE PROPERTY; ULTRAVIOLET SPECTROPHOTOMETRY;

4-AMINOBENZOIC ACID; CHEMISTRY, ORGANIC; ELECTROCHEMISTRY; HYDROGEN SULFIDE; INDANS; MODELS, CHEMICAL; NANOPARTICLES; NANOTECHNOLOGY; SEMICONDUCTORS; SPECTROPHOTOMETRY; SPECTROPHOTOMETRY, ULTRAVIOLET; SULFIDES; SURFACE PROPERTIES; ZINC; ZINC COMPOUNDS;

EID: 35348917101     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2007.627     Document Type: Article

References (26)

1. W. Jones, (ed.), Organic Molecular Solids, CRC Press, New York (1997).
2. M. C Petty, Langmuir-Blodgett Films: An Introduction, Cambridge University Press, Cambridge (1996), p. 6.
3. E. S. Smotkin, C. Lee, A. J. Bard, A. Campion, M. A. Fox, T. E. Mallouk, S. E. Webber, and J. M. White, Chem. Phys. Lett. 153, 265 (1988).
4. A. Rualudel-Teixier, J. Leloup, and A. Barraud, Mol. Cryst. Liq. Cryst. 134, 347 (1986).
5. A. V. Nabok, B. Iwantono, A. K. Hassan, A. K. Ray, and T. Wilkop, Mater. Sci. Eng. C 22, 355 (2002).
6. A. V. Nabok, T. Richardson, C. McCartney, N. Cowlam, F. Davis, J. M. Stirling, A. K. Ray, T. Gacem, and A. Gibaud, Thin Solid Films 327-329, 510 (1998).
7. L. S. Li, L. Qu, R. Lu, X. Peng, Y. Zhao, and T. J. Li, Thin Solid Films 327-329, 408 (1998).
8. X. M. Yang, G. M. Wang, and Z. H. Lu, Supramolecular Science 5, 549 (1998).
9. U. N. Roy and L. M. Kukreja, J. Crystal Growth 250, 405 (2003).
10. M. Parhizkar, Nigvendra Kumar, P. K. Nayak, S. S. Talwar, S. S. Major, and R. S. Srinivasa, Colloids and Surfaces A: Physicochem. Eng. Aspects 257-258, 405 (2005).
11. I. Moriguchi, H. Nii, K. Hanai, H. Nagaoka, Y. Teraoka, and S. Kagawa, Colloids and Surfaces A: Physicochem. Eng. Aspects 103, 3 (1995).
12. B. L. Zhu, X. Chen, L. M. Xu, H. G. Liu, Z. M. Sui, and J. Liu, Thin Solid Films 474, 114 (2005).
13. M. Parhizkar, N. Prasanth Kumar, B. Shukla, R. S. Srinivasa, S. Vitta, Nigvendra Kumar, S. S. Talwar, and S. S. Major, Colloids and Surfaces A: Physicochem. Eng. Aspects 257-258, 7 (2005).
14. V. Erokhin, S. Carrara, H. Amenitch, S. Bernstoff, and C. Nicolini, Nanotechnology 9, 158 (1988).
15. I. Muzikante, E. Fonavs, and E. A. Silinsh, Adv. Mater. Opt. Electron. 6, 283 (1996).
16. I. Muzikante, E. Fonavs, E. A. Silinsh, B. Yang, F. Ciuchi, B. Dubini, and D. Honig, Supramolecular Sci. 4, 399 (1997).
17. D. U. Kim, S. H. Paik, S. H. Kim, Y. H. Tak, Y. S. Han, S. D. Kim, K. B. Kim, H. J. Ju, and T. J. Kim, Mater. Sci. Eng. C 24, 147 (2004).
18. O. Dubrovich, M. Utinans, V. Zauls, and O. Neilands, Mater. Sci. Eng. C 8-9, 391 (1999).
19. M. Utinans and O. Neilands, Adv. Mater. Opt. Electron. 9, 19 (1999).
20. R. Çapan, M. Evyapan, H. Namli, O. Turhan, and G. A. Stanciu, J. Nanosci. Nanotechnol. 5, 1108 (2005).
21. A. D. Yoffe, Adv. Phys. 51, 799 (2002).
22. R. Capan, A. K. Hassan, A. V. Nabok, A. K. Ray, T. H. Richardson, M. C. Simmonds, and C. Sammon, IEE Proc.-Circuits, Devices and Systems 150, 367 (2003).
23. S. M. Sze, Physics of Semiconductor Devices, Wiley-Interscience, New York (1981), p. 250.
24. N. J. Geddes, J. R. Sambles, W. G. Parker, N. R. Couch, and D. J. Jarvis, J. Phys. D. Appl. Phys. 23, 95 (1990).
25. A. Wu, T. Fujuwara, M. Jikel, M. Kakimoto, Y. Imai, T. Kubota, and M. Iwamoto, Thin Solid Films 284-285, 901 (1996).
26. R. Capan, A. K. Ray, T. H. Richardson, A. K. Hassan, and F. Davis, J. Nanosci. Nanotechnol. 5, 1 (2005).