Numerical simulation of the transient photoconductivity in hydrogenated amorphous silicon including localized-state electron hopping

Journal of Physics Condensed Matter

Volumn 19, Issue 43, 2007, Pages

  Tobbeche, S ^a   Merazga, A ^b  

^a UNIVERSITY OF BISKRA   (Algeria)

^b KING KHALID UNIVERSITY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONIC STATES; HYDROGENATION; PHOTOCONDUCTIVITY;

ELECTRON HOPPING (EH); FREE CARRIER CAPTURE; MULTIPLE-TRAPPING (MT);

AMORPHOUS SILICON;

EID: 35348845216     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/43/436220     Document Type: Article

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