A novel EUV exposure station for nanotechnology studies

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 582, Issue 1, 2007, Pages 254-257

  Wallace, John ^a   Cheng, Yang Chun ^a   Isoyan, Artak ^a   Leonard, Quinn ^a   Fisher, Mike ^b   Green, Mike ^b   Bisognano, Joseph ^b   Nealey, Paul ^a   Cerrina, Franco ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

EUV lithography; Holographic lithography; Interferometric lithography; Nanolithography; Nanotechnology; Planar undulator

Indexed keywords

GAS CHROMATOGRAPHY; INTERFEROMETRY; NANOTECHNOLOGY; OPTICAL SYSTEMS;

HOLOGRAPHIC LITHOGRAPHY; INTERFEROMETRIC LITHOGRAPHY; PLANAR UNDULATOR;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 35348824916     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.08.124     Document Type: Article

References (4)

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3. Solak H.H., David C., Gobrecht J., Wang L., and Cerrina F. J. Vac. Sci. Technol. B 20 (2002) 2844
4. Cheng Y.-C., Isoyan A., Wallace J., Khan M., and Cerrina F. Appl. Phys. Lett. 90 (2007) 023116