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Volumn 6518, Issue PART 1, 2007, Pages

Enabling immersion lithography and double patterning

Author keywords

Advanced process control; Design for manufacturability; Double patterning; Immersion lithography; Line end shortening; Overlay metrology; Pitch splitting; Scatterometry

Indexed keywords

ADVANCED PROCESS CONTROL (APC); DESIGN FOR MANUFACTURABILITY (DFM); DOUBLE PATTERNING LITHOGRAPHY (DPL); OVERLAY METROLOGY;

EID: 35148893585     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.714204     Document Type: Conference Paper
Times cited : (5)

References (5)
  • 1
    • 33745629028 scopus 로고    scopus 로고
    • Enabling DFM and APC strategies with advanced process metrics
    • and references therein
    • K. Monahan and U. Whitney, "Enabling DFM and APC strategies with advanced process metrics", Proceedings of SPIE, vol. 6152, 2006, and references therein.
    • (2006) Proceedings of SPIE , vol.6152
    • Monahan, K.1    Whitney, U.2
  • 2
    • 33745623365 scopus 로고    scopus 로고
    • Scatterometry measurements of line end shortening structures for focus-exposure monitoring
    • K. Hung, et al., "Scatterometry measurements of line end shortening structures for focus-exposure monitoring", Proceedings of SPIE, vol. 6152, 2006.
    • (2006) Proceedings of SPIE , vol.6152
    • Hung, K.1
  • 3
    • 4344707706 scopus 로고    scopus 로고
    • Application of spectroscopic ellipsometry for ultra thin spacer structure
    • Ryan Chia-Jen Chen, et al., "Application of spectroscopic ellipsometry for ultra thin spacer structure", Proceedings of SPIE, vol. 5375, pp 1381-1374, 2005.
    • (2005) Proceedings of SPIE , vol.5375 , pp. 1381-1374
    • Chia-Jen Chen, R.1
  • 4
    • 33749658970 scopus 로고    scopus 로고
    • Gate spacer width monitoring study with scatterometry based on spectroscopic ellipsometry
    • V. Vachellerie, "Gate spacer width monitoring study with scatterometry based on spectroscopic ellipsometry", in Characterization and Metrology for ULSI Technology 2005, pp. 411-420.
    • (2005) Characterization and Metrology for ULSI Technology , pp. 411-420
    • Vachellerie, V.1
  • 5
    • 33751431505 scopus 로고    scopus 로고
    • Metal layer monitoring in DRAM production by the use of spectroscopic ellipsometry-based scatterometry
    • M. Wang, et al., "Metal layer monitoring in DRAM production by the use of spectroscopic ellipsometry-based scatterometry," Proceedings of ASMC, 2006.
    • (2006) Proceedings of ASMC
    • Wang, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.