Towards standard process models for OPC

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6520, Issue PART 3, 2007, Pages

  Granik, Yuri ^a   Medvedev, Dmitry ^a   Cobb, Nick ^a  

^a MENTOR GRAPHICS CORPORATION   (United States)

Author keywords

CM0; Compact resist models; Lithographical models; OPC; Optical lithography; Optical proximity correction; VT5

Indexed keywords

COMPACT RESIST MODELS; LITHOGRAPHICAL MODELS; OPTICAL PROXIMITY CORRECTION; RESIST MEASUREMENTS;

CHIP SCALE PACKAGES; COMPUTER SIMULATION; ELECTRIC RESISTANCE; ERROR ANALYSIS; PATTERN RECOGNITION;

PHOTOLITHOGRAPHY;

EID: 35148870563     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712229     Document Type: Conference Paper

References (4)

1. Y. Granik, "Correction for etch proximity: new models and applications", Proc. SPIE Vol. 4346, p. 98-112, 2001.
2. T. C. Roessler, et al, "Call for an industry standard for pattern transfer models for usage in OPC and design for manufacturability", Proc. SPIE Vol. 6156, 2006.
3. Y.Granik, et. al, "Application of CMO resist model to OPC and verification", Proc. SPIE Vol. 6154, 2006.
4. H. Fukuda, et al, "Impact of acid/quencher behavior on lithography performance", Proc. SPIE Vol. 4346, p. 319-330, 2001.