Application of CM0 resist model to OPC and verification

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6154 III, Issue , 2006, Pages

  Granik, Yuri ^a   Cobb, Nick ^a   Medvedev, Dmitry ^a  

^a MENTOR GRAPHICS CORPORATION   (United States)

Author keywords

Compact resist models; Lithographical models; OPC; Optical lithography; Optical proximity correction; VT5

Indexed keywords

COMPACT RESIST MODELS; LITHOGRAPHICAL MODELS; OPC; OPTICAL PROXIMITY CORRECTION; VT5;

CALIBRATION; LINEARIZATION; MATHEMATICAL MODELS; MEASUREMENT THEORY; PHOTOLITHOGRAPHY; PROBLEM SOLVING;

OPTICAL DESIGN;

EID: 33745790462     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656566     Document Type: Conference Paper

References (7)

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2. T. C. Roessler, et al, "Call for an industry standard for pattern transfer models for usage in OPC and design for manufacturability", Proc. SPIE Vol. 6156, 2006.
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4. A. Borjon, et al, "Through-process window resist modelling strategies for the 65 nm node", Proc. SPIE Vol. 5992, p. 408-417, 2005.
5. Y. Granik, et al, "Universal process modeling with VTRE for OPC", Proc. SPIE Vol. 4691, p. 377-394, 2002.
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7. H. Fukuda, et al, "Impact of acid/quencher behavior on lithography performance", Proc. SPIE Vol. 4346, p. 319-330, 2001.