Formulated surface conditioners in 50 nm immersion lithography: Simultaneously reducing pattern collapse and line-width roughness

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 2, 2007, Pages

  Sugiyama, Minoru ^a   Sanada, Masakazu ^a   Wang, Suping ^b   Wong, Patrick ^b   Sinkwitz, Stephan ^b   Jaramillo Jr , Manuel ^c   Parris, Gene ^c  

^a Sokudo Co Ltd   (Japan)

^b ASML   (Netherlands)

^c AIR PRODUCTS AND CHEMICALS INC   (United States)

Author keywords

50 nm dense lines; Lithographic DOF; Lithographic EL; LWR; Pattern collapse; Process optimization; Process window; Surface conditioner; Useable DOF; Useable EL

Indexed keywords

ASPECT RATIO; LITHOGRAPHY; OPTIMIZATION; PROCESS CONTROL; SILICON WAFERS; SURFACE ROUGHNESS;

DENSE LINES; FOCUS EXPOSURE MATRIX (FEM); PATTERN COLLAPSE; PROCESS WINDOWS; SURFACE CONDITIONERS;

INTEGRATED CIRCUIT LAYOUT;

EID: 35148819284     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712188     Document Type: Conference Paper

References (4)

1. "International Technology Roadmap for Semiconductors (ITRS),"Semiconductor Industry Association 2006
2. A. R. Pawloski, A. Acheta, I. Lalovic, B. La Fontaine, H. J. Levinson, "Characterization of line edge roughness in photoresist using an image fading technique," in Advances in Resist Technology and Processing XXIII, Qinghuang Lin, Ed., SPIE 5376, 7-11(2004).
3. P. Zhang, M. Jaramillo, S. Cassel, T. Wallow, A. Acheta, A. R. Pawloski, S. Bell, R. H. Kim, "Post-Etch LER Performance of Novel Surface Conditioner Solutions," in Advances in Resist Technology and Processing XXIII, Qinghuang Lin, Ed., Proc. SPIE 6153, 1-5 (2006).
4. P. Zhang, M. Jaramillo, M. Rao, B. Ross, B. Horvath, P. Wong, W. Gehoel, S. Sinkwitz, "Combined Pattern Collapse and LWR Control at 70 nm Node through Application of Novel Surface Conditioner Solutions", in Advances in Resist Technology and Processing XII, J. L. Sturtevant, Ed., Proc. SPIE, 5753, 1018-1023, (2005).