A 45-to-60-GHz two-band SiGe:C VCO for millimeter-wave applications

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2007, Pages 709-712

  Lee, Ja Yol ^a   Lee, Sang Heung ^a   Kim, Haecheon ^a   Yu, Hyun Kyu ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

60 GHz; Phase noise; Receiver; SiGe:C; VCO

Indexed keywords

BIAS CURRENTS; CMOS INTEGRATED CIRCUITS; MILLIMETER WAVE DEVICES; PHASE NOISE;

MILLIMETER-WAVE APPLICATIONS; TUNING RANGES;

VARIABLE FREQUENCY OSCILLATORS;

EID: 34748858479     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2007.380981     Document Type: Conference Paper

References (6)

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3. W. Winkler et al., "A fully integrated BiCMOS PLL for 60 GHz wireless applications," IEEE ISSCC, pp. 406-407, Feb. 2005.
4. C. Lee et al., "SiGe BiCMOS 65 GHz transmitter and 30 to 122 GHz LC-varactor VCOs with up to 21 % tuning range," IEEE CSICS Sym., pp. 179-182, Oct. 2004.
5. Timonthy O. Dickson et al., "30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits," IEEE Trans. on MTT, vo. 51, no. 8, pp. 1952-1959, Jan. 2005.
6. Neric H. W. Fong et al., "A 1-V 3.8-5.7-GHz wide-band VCO with differential tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology," IEEE Trans. on MTT, vo. 51, no. 8, pp. 1952-1959, Aug. 2003.