A 26 GHz integrated differential DRO implemented using SiGe-HBT technology

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 657-660

  Hamed, Karim W ^a,c   Freundorfer, Al P ^a   Antar, Yahia M M ^b  

^a QUEEN S UNIVERSITY   (Canada)

^b ROYAL MILITARY COLLEGE OF CANADA   (Canada)

^c Mimix Broadband Inc   (United States)

Author keywords

Coupling coefficient; Dielectric resonators; DRO; Printed dipole; s; SiGe; Silicon

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; NATURAL FREQUENCIES; OSCILLATORS (ELECTRONIC); SEMICONDUCTING SILICON COMPOUNDS;

COUPLING COEFFICIENT; OSCILLATION FREQUENCY; OUTPUT POWER; PRINTED DIPOLE;

DIELECTRIC RESONATORS;

EID: 34748854991     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380005     Document Type: Conference Paper

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