The critical role of the metal / porous low-k interface in post direct CMP defectivity generation and resulting ULK surface and bulk hydrophilisation

Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers

Volumn , Issue , 2007, Pages 164-166

  Travaly, Y ^a   Sinapi, F ^a   Heylen, N ^a   Humbert, A ^b   Delande, M ^a   Caluwaert, R ^a   De Mussy, J P ^a   Vereecke, G ^a   Baklanov, M R ^a   Iacopi, F ^a   Hernandez, J L ^a   Beyer, G ^a   Fischer, P ^c  

^a IMEC   (Belgium)

^b NXP SEMICONDUCTORS   (Netherlands)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROPHILICITY; INTERFACES (MATERIALS); PH EFFECTS; SURFACE DEFECTS; ULTRAVIOLET RADIATION;

METALLIC LAYERS; SLURRY SOLUTION; SOLID CONTENT; SURFACE HYDROPHILISATION;

METALLIC FILMS;

EID: 34748825751     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iitc.2007.382379     Document Type: Conference Paper

References (6)

1. S. Kondo et al, Proc. of IITC 2006; N. Heylen et al., Proc. AMC/ADMETA 2006
2. H. Struyf et al, Proc. of IITC 2005
3. Takeshi et al.,
4. O. Hinsinger, et al., Technical Digest. IEDM 2004; Y. Travaly, et al. Proceedings of the AMC2005; A. Ikeda et al., Proc. of HTC 2006
5. F. Iacopi et al., ACTA Materialia, in press
6. M. R. Baklanov et al., Microelectronic Eng. 83 (2006), 2287-2291