High-Q BAW resonator on Pt/Ta2O5/SiO 2-based reflector stack

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 2047-2050

  Lobeek, Jan Willem ^a   Strijbos, Remco ^a   Jansman, Andre ^a   Li, Nancy Xin ^a   Smolders, A Bart ^a   Pulsford, Nick ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Bulk acoustic wave (BAW) devices; Front end module; Passive integration; SBAR

Indexed keywords

ACOUSTIC WAVES; BOUNDARY CONDITIONS; CHARACTERIZATION; OPTIMIZATION; PLATINUM; SILICA; TANTALUM COMPOUNDS;

BULK-ACOUSTIC-WAVE (BAW) DEVICES; FRONT-END-MODULE; PASSIVE INTEGRATION;

RESONATORS;

EID: 34748821153     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380253     Document Type: Conference Paper

References (6)

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3. R.C. Ruby; Bradley P.; Oshmyansky, Y.; Chien, A.; Larson, J.D. "Thin film bulk wave acoustic resonators (FBAR) for wireless applications" IEEE Proc. Ultrasonics Symposium, pp. 813-821, 2001.
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