Gate-tuned high frequency eesponse of carbon nanotube josephson junctions

Physical Review Letters

Volumn 99, Issue 11, 2007, Pages

  Cleuziou, J P ^a   Wernsdorfer, W ^b   Andergassen, S ^b   Florens, S ^b   Bouchiat, V ^b   Ondarauhu Th ^a   Monthioux, M ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRODES; SEMICONDUCTOR JUNCTIONS; SUPERCONDUCTIVITY; VOLTAGE CONTROL;

DYNAMICAL CAPACITANCE; GATE VOLTAGE; SWITCHING CURRENTS;

CARBON NANOTUBES;

EID: 34548757891     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.99.117001     Document Type: Article

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