Reversible degradation of GaN LEDs related to passivation

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 457-461

  Meneghini, Matteo ^a   Trevisanello, Lorenzo Roberto ^a   Penzo, Roberto ^a   Benedetti, Mattia ^a   Zehnder, Ulrich ^b   Strauss, Uwe ^b   Meneghesso, Gaudenzio ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Degradation; Gallium nitride; Hydrogen, passivation; Light emitting diodes; Stress

Indexed keywords

DEGRADATION; FAILURE MODES; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; PASSIVATION; STRESS ANALYSIS;

HIGH TEMPERATURE STORAGE; OPTICAL CHARACTERISTICS; REVERSIBLE DEGRADATION; TRANSFER LENGTH METHOD (TLM);

LIGHT EMITTING DIODES;

EID: 34548753439     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369933     Document Type: Conference Paper

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