Origin of ferromagnetism in co-ion-implanted anatase TiO2 thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 A, 2007, Pages 5767-5770

  Gao, Yun ^a   Wong, Sai Peng ^b   Li, Quan ^b   Cheng, Kai Hong ^b   Ke, Ning ^b   Cheung, Wing Yiu ^b   Shao, Guo Sheng ^c  

^a HUBEI UNIVERSITY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF BOLTON   (United Kingdom)

Author keywords

Diluted semiconductor; Ferromagnetism; TiO2; Transmission electron microscopy; X ray photoelectron spectrometry

Indexed keywords

FERROMAGNETISM; ION IMPLANTATION; RAPID THERMAL ANNEALING; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURE; DILUTED SEMICONDUCTORS; FERROMAGNETIC ANATASE; METAL VAPOR VACUUM ARC ION SOURCE;

THIN FILMS;

EID: 34548717126     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5767     Document Type: Article

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