Rectifying behaviours of heterojunctions composed of manganites with different resistive properties

Journal of Physics D: Applied Physics

Volumn 40, Issue 17, 2007, Pages 5075-5079

  Wang, D J ^a   Sun, J R ^a   Lu W M ^a   Xie, Y W ^a   Liang, S ^a   Shen, B G ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATORS; ELECTRON TUNNELING; MAGNETIC THIN FILMS; MANGANITES; PHASE TRANSITIONS; RECTIFYING CIRCUITS; THERMAL EFFECTS;

BUILT-IN VOLTAGE; DEPLETION LAYER; DIFFUSION CURRENT; OXIDE HETEROJUNCTIONS; RECTIFYING BEHAVIOURS; TUNNELLING CURRENT;

HETEROJUNCTIONS;

EID: 34548681173     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/17/012     Document Type: Article

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