Comparative characterization of differently grown ZnO single crystals by positron annihilation and Hall effect

Superlattices and Microstructures

Volumn 42, Issue 1-6, 2007, Pages 259-264

  Brauer, G ^a   Anwand, W ^a   Skorupa, W ^a   Kuriplach, J ^b   Melikhova, O ^b   Cizek, J ^b   Prochazka, I ^b   Moisson, C ^c   von Wenckstern, H ^d   Schmidt, H ^d   Lorenz, M ^d   Grundmann, M ^d  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b CHARLES UNIVERSITY   (Czech Republic)

^c SAVOIE TECHNOLAC   (France)

^d UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Charge balance equation; Hall effect; Slow positron implantation spectroscopy; Vacancy type defects; ZnO single crystal

Indexed keywords

CARRIER MOBILITY; CRYSTAL GROWTH; HALL EFFECT; POLISHING; POSITRON ANNIHILATION; SINGLE CRYSTALS; VACANCIES;

ACCEPTOR DENSITIES; CHARGE BALANCE EQUATION; DEPTH DISTRIBUTION; HYDROTHERMAL GROWTH; PRESSURIZED MELT; ROOM TEMPERATURE; SLOW POSITRON IMPLANTATION SPECTROSCOPY;

ZINC OXIDE;

EID: 34548534656     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.04.003     Document Type: Article

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