Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2474-2477

  Shubina, T V ^a,b   Glazov, M M ^a   Ivanov, S V ^a   Vasson, A ^b   Leymarie, J ^b   Monemar, B ^c   Araki, T ^d   Naoi, H ^d   Nanishi, Y ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITÉ BLAISE PASCAL   (France)

^c LINKÖPING UNIVERSITY   (Sweden)

^d RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; DIELECTRIC CONSTANTS; EFFECTIVE BAND GAP; EFFECTIVE MASSES; FUNDAMENTAL PARAMETERS; HARRISON BOND-ORBITAL MODEL; NEAREST NEIGHBORS; NITRIDE SEMICONDUCTORS; NON-PARABOLICITY; NON-STOICHIOMETRY; REASONABLE AGREEMENT; TIGHT BINDING THEORY;

ABSORPTION; CRYSTALS; ELECTRIC CONDUCTIVITY; NITRIDES; SEMICONDUCTOR MATERIALS; STOICHIOMETRY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34548495868     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674908     Document Type: Conference Paper

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