Doping fluctuation effects in multiple-gate SOI MOSFETs

NATO Security through Science Series C: Environmental Security

Volumn , Issue , 2007, Pages 165-170

  Colinge, C A ^a   Xiong, W ^b   Cleavelin, C R ^b   Colinge, Jean Pierre ^c  

^a TEXAS INSTRUMENTS   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c University of California   (United States)

Author keywords

Doping fluctuations; Multiple gate MOSFETs; Silicon on insulator; SOI MOSFET

Indexed keywords

EID: 34548396390     PISSN: 18714668     EISSN: None     Source Type: Book Series    
DOI: 10.1007/978-1-4020-6380-0_12     Document Type: Conference Paper

References (3)

1. H.-S.Wong and Y. Taur, in: Tech. Digest of IEDM (1993), pp. 705-708
2. A. Asenov, G. Slavcheva, A.R. Brown, J.H. Davies and S. Saini, IEEE Trans. Electron Devices, 48(4) 722-729 (2001)
3. COMSOL MULTIPHYSICS™ (COMSOL, Inc.); http://www.comsol.com/ products/-multiphysics/