Local structure of technologically modified g-GeS2: Resonant Raman and absorption edge spectroscopy combined with ab initio calculations

Philosophical Magazine

Volumn 85, Issue 25, 2005, Pages 2947-2960

  Holomb, R ^a   Johansson, P ^b   Mitsa, V ^a   Rosola, I ^a  

^a UZHGOROD NATIONAL UNIVERSITY   (Ukraine)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; COOLING; CORRELATION METHODS; ELECTRONIC STRUCTURE; ENERGY GAP; STRUCTURE (COMPOSITION);

COOLING RATES; MELT TEMPERATURES; MOLECULAR LEVEL ELECTRONIC STRUCTURE;

RESONANCE;

EID: 27944469558     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430500156112     Document Type: Article

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